| PART |
Description |
Maker |
| T2G405528-FS-EVB2 T2G4005528-FS |
55W, 28V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| 0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦，28V的，1 GHz的LDMOS的场效应
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
| D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管（功100W - 28V 900MHz时）（镀金多用的DMOS射频硅场效应管（功率100W - 28V 900MHz的）
TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| TDA7265SA |
18W 18W STEREO AMPLIFIER WITH MUTE & ST-BY
18W 18W STEREO AMPLIFIER WITH MUTE & ST-BY
|
ST Microelectronics
STMicroelectronics
|
| CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| TGA2611-SM-15 |
2 6 GHz GaN LNA
|
TriQuint Semiconductor
|
| CG2H80015D |
15 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| TGA2623-CP TGA2623-CP-15 |
10 to 11 GHz 32 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| CMPA601C025F |
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
